In the latest study, scientists first grew a magnesium oxide-based magnetic tunnel junction (MTJ) on a silicon surface, then etched away the silicon underneath, and subsequently used a transfer method to implant a magnetic memory chip on a flexible plastic surface made of polyethylene terephthalate.
  
  The operation of the new device on magnetoresistive random access memory (MRAM) shows that MRAM is stronger than conventional random access memory computer chips in many ways, such as higher processing speed, lower energy consumption, and the ability to store data after a power failure.
  
  Flexible electronic devices are especially eye-catching with flexible magnetic storage devices, as they are key components for data storage and processing in wearable electronics and biomedical devices. Although scientists have conducted several studies on different memory chips and materials, it is still a great challenge to construct high-performance memory chips on flexible substrates without compromising their performance. For this reason, Hyun Soo Yang, an associate professor at the National University of Singapore, led scientists at Yonsei University in South Korea, Ghent University in Belgium and the Institute of Materials Research and Engineering in Singapore to develop the new technology.
  
  We are the first team to construct a magnetic memory on a flexible surface," said Yang. Experiments have demonstrated that the new device can achieve a tunneling magnetoresistance of 300 percent, and we have also managed to improve the control of the switch, which enables this flexible magnetic chip to transfer data faster."
  
  The team, which recently filed patents for the technology in the U.S. and South Korea, is further boosting the device's magnetoresistance and plans to apply it to other electronic devices.
  
  Related research is published in the latest issue of the journal Advanced Materials.

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